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EN71GL128B0 Purpose
Eon Silicon Solution Inc. (hereinafter called "Eon") is going to provide its products' top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the same as that of Eon delivered before. Please be advised with the change and appreciate your kindly cooperation and fully support Eon's product family.
Eon products' New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX Lot Number: XXXXX Date Code: XXXXX
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as an Eon product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Eon continues to support existing part numbers beginning with "Eon" and "cFeon" top marking. To order these products, during the transition please specify "Eon top marking" or "cFeon top marking" on your purchasing orders.
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications.
(c)2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/5/27
EN71GL128B0 Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
EN71GL128 Base MCP
Distinctive Characteristics
MCP Features
Power supply voltage of 2.7 V to 3.3V High performance - 70 ns Package - 7 x 9 x 1.2mm 56 ball FBGA

Operating Temperature - 25C to +85C
General Description
The EN71GL series is a product line of stacked Multi-Chip Product (MCP) packages and consists of: EN29GL128 (Page mode) Flash memory die. Pseudo SRAM.

For detailed specifications, please refer to the individual datasheets listed in the following table. Device NOR Flash Pseudo SRAM Document EN29GL128 ENPSL32
Product Selector Guide
128Mb Flash Memory
Device-Model# Flash Access time EN71GL128B0 70ns pSRAM density pSRAM Access time 32M pSRAM 70ns
Page read Access time 25ns Package 56 FBGA
pSRAM Page read Access time 25ns
This Data Sheet may be revised by subsequent versions 2 or modifications due to changes in technical specifications.
(c)2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/5/27
EN71GL128B0 MCP Block Diagram
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
3
(c)2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/5/27
EN71GL128B0 Connection Diagram
MCP EN71GL128B0
Flash-only Addresses A22, A21
Shared Addresses A20 - A0
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
4
(c)2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/5/27
EN71GL128B0 Pin Description
Signal
A22-A0 DQ15-DQ0 CE1#f CE1#ps CE2ps OE# WE# RY/BY# UB# LB# RESET# WP#/ACC VCCf VCCps VSS NC
Description
23 Address Inputs (Common) 16 Data Inputs/Outputs (Common) Chip Enable 1 (Flash) Chip Enable 1 (pSRAM) Chip Enable 2 (pSRAM) Output Enable (Common) Write Enable (Common) Ready/Busy Output (Flash) Upper Byte Control (pSRAM) Lower Byte Control (pSRAM) Hardware Reset Pin, Active Low (Flash) Hardware Write Protect/Acceleration Pin (Flash) Flash 3.0 volt-only single power supply pSRAM Power Supply Device Ground (Common) Pin Not Connected Internally
Logic Symbol
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
5
(c)2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/5/27
EN71GL128B0
ORDERING INFORMATION
EN71GL128 B0 70 C W P
PACKAGING CONTENT (Blank) = Conventional P = Pb Free TEMPERATURE RANGE W = Wireless (-25C to +85C)
PACKAGE C =56-Ball Fine Pitch Ball Grid Array (FBGA) 0.80mm pitch, 7mm x 9mm package SPEED 70 = 70ns
pSRAM density B0 = 32M pSRAM
BASE PART NUMBER EN = Eon Silicon Solution Inc. 71GL = Multi-chip Product (MCP) 3.0V Page Mode Flash Memory and RAM 128 = 128 Megabit (8M x 16)
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
6
(c)2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/5/27
EN71GL128B0 PACKAGE MECHANICAL
56-ball Fine-Pitch Ball Grid Array (FBGA) 7 x 9 mm Package, pitch: 0.8mm, ball: 0.4mm
SYMBOL A A1 A2 D E D1 E1 e b
DIMENSION IN MM MIN. - -0.25 0.80 8.95 6.95 - -- -- -0.35 NOR --0.30 --9.00 7.00 5.60 5.60 0.80 0.40 MAX 1.20 0.35 0.95 9.05 7.05 - -- -- -0.45
Note : Controlling dimensions are in millimeters (mm).
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
7
(c)2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/5/27
EN71GL128B0
Revisions List
Revision No A Description Initial Release Date 2009/05/27
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
8
(c)2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/5/27

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